2SB1148 Panasonic Semiconductor, 2SB1148 Datasheet - Page 2

• Manufacturer Part Number: 2SB1148
• Description: Silicon PNP epitaxial planar type(For low-voltage switching)
• Manufacturer: Panasonic Semiconductor

Power Transistors
2
– 0.3
– 0.1
– 0.03
– 0.01
10000
3000
1000
–10
300
100
20
15
10
–3
–1
30
10
– 0.1
– 0.1
5
0
3
1
Collector to base voltage V
0
Ambient temperature Ta ( ˚C )
20
– 0.3
Collector current I
– 0.3
40
V
C
–1
BE(sat)
P
ob
60
C
T
25˚C
(2)
–1
C
— V
(1) T
(2) Without heat sink
— Ta
=–25˚C
–3
80
100˚C
(P
(1)
— I
C
C
100
=Ta
CB
=1.3W)
–3
–10
C
C
120
I
f=1MHz
Ta=25˚C
E
=0
I
–30
C
( A )
/I
–10
CB
140
B
=30
–100
( V )
160
10000
1000
0.03
0.01
3000
–12
–10
300
100
0.3
0.1
–8
–6
–4
–2
30
10
10
Collector to emitter voltage V
– 0.1
0
3
1
3
1
0
0
– 0.3
–1
T
Collector current I
Collector current I
–2
C
=100˚C
–25˚C
t
–2
on
I
, t
–4
–1
h
C
–3
I
FE
B
stg
— V
=–100mA
t
, t
on
t
— I
25˚C
f
–3
–6
–4
–80mA
f
t
stg
— I
CE
Pulsed t
Duty cycle=1%
I
(–I
V
T
C
C
–60mA
–5
C
CC
/I
–10
B1
=25˚C
–8
B
=–20V
=30
–40mA
–35mA
=I
–50mA
C
C
C
–6
V
B2
–30mA
CE
–25mA
T
w
–20mA
)
–30
–15mA
–10
( A )
( A )
=1ms
C
–10mA
=–2V
=25˚C
–5mA
–7
CE
–100
–12
–8
( V )
– 0.3
– 0.1
– 0.03
– 0.01
10000
3000
1000
–100
– 0.3
– 0.1
– 0.03
– 0.01
–10
300
100
–30
–10
–3
–1
30
10
–3
–1
Area of safe operation (ASO)
Collector to emitter voltage V
– 0.1
– 0.01
3
1
2SB1148, 2SB1148A
–1
I
I
CP
C
– 0.03
Collector current I
Collector current I
300ms
–3
– 0.3
V
– 0.1
–10
CE(sat)
f
T
–1
— I
– 0.3
–30
Non repetitive pulse
T
25˚C
— I
C
t=1ms
=25˚C
C
T
–100
–3
C
10ms
–1
C
=100˚C
C
C
V
f=10MHz
T
CE
C
–300
=25˚C
I
( A )
( A )
–3
=–10V
C
–10
–25˚C
/I
CE
B
=30
–1000
–10
( V )