KSH13009H SHANTOU HUASHAN, KSH13009H Datasheet
KSH13009H
Manufacturer Part Number
KSH13009H
Description
NPN SILICON TRANSISTOR
Manufacturer
SHANTOU HUASHAN
Datasheet
1.KSH13009H.pdf
(3 pages)
www.DataSheet.in
█ ELECTRICAL CHARACTERISTICS(T
BV
I
H
H
V
V
V
V
V
Cob
f
t
t
t
T
ON
STG
F
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
█ ABSOLUTE MAXIMUM RATINGS(T
EBO
CE(sat1)
CE(sat2)
CE(sat3)
BE(sat1)
BE(sat2)
T
T
P
V
V
V
I
I
FE(1)
FE(2)
Symbol
C
B
C
stg
j
CBO
CEO
EBO
CEO
——Collector Current(DC)……………………………… 12A
——Base Current……………………………………………6A
——Junction Temperature……………………………… 150℃
——Collector Dissipation (T
——Storage Temperature………………………… -55~150℃
——Collector-Emitter Voltage………………………… 400V
——Collector-Base Voltage…………………………… 700V
——Emitter-Base Voltage……………………………… 9V
High Speed Switching
Suitable for Switching Regulator and Montor Control
Shantou Huashan Electronic Devices Co.,Ltd.
Collector- Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Characteristics
c
=25℃) …………………… 130W
a
400
Min
a
=25℃)
=25℃)
8
6
4
180
Typ
N P N S I L I C O N T R A N S I S T O R
Max
1.5
1.2
1.6
1.1 μs
3.0 μs
0.7 μs
40
30
1
1
3
KSH13009H
TO-3P
Unit
MHz
1―
2―Collector,C
3―Emitter, E
mA V
pF V
V I
V I
V I
V I
V I
V I
Base,B
V
V
V
C
C
C
C
C
C
CE
EB
CE
CE
CB
=10mA, I
=5A, I
=8A, I
=12A, I
=5A, I
=8A, I
V
I
RL=15.6
=10V
B1
=9V, I
=5V, I
=5V, I
=10V,f=0.1MHz
CC
=1.6A,I
Test Conditions
=125V, I
B
B
B
B
,I
=1A
=1.6A
B
=1A
=1.6A
C
C
C
C
=3A
=0
=5A
=8A
Ω
=0.5A
B
=0
B2
=-1.6A
C
=8A,
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KSH13009H Summary of contents
Page 1
... KSH13009H TO-3P 1― Base,B 2―Collector,C 3―Emitter, E Typ Max Unit Test Conditions ...
Page 2
... KSH13009H ...
Page 3
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13009H ...