FS40SM-6 Mitsubishi Electric Semiconductor, FS40SM-6 Datasheet - Page 2

• Manufacturer Part Number: FS40SM-6
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
100
80
60
40
20
10
POWER DISSIPATION DERATING CURVE
0
8
6
4
2
0
0
0
DRAIN-SOURCE VOLTAGE V
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
Parameter
10
50
P
D
= 100W
(TYPICAL)
20
100
30
(Tch = 25°C)
I
I
V
V
I
I
I
I
V
V
R
I
Channel to case
V
D
GS
D
D
D
D
S
150
GS
DS
DS
DD
GS
GEN
T
Pulse Test
= 1.5A, V
= 1mA, V
= 1mA, V
= 1.5A, V
= 1.5A, V
= 1.5A, V
C
C
40
= ±100 A, V
= 20V
= 900V, V
= 25V, V
= ±25V, V
= 200V, I
= 25°C
(°C)
DS
= R
10V
(V)
5V
4V
GS
200
50
GS
GS
GS
GS
DS
DS
GS
= 50
D
DS
GS
= 0V
= 10V
= 10V
= 10V
= 10V
= 0V
= 1.5A, V
= 0V, f = 1MHz
DS
= 0V
= 0V
= 0V
Test conditions
GS
= 10V,
10
10
10
10
2.0
1.6
1.2
0.8
0.4
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
10
0
MAXIMUM SAFE OPERATING AREA
0
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
V
T
Single Pulse
GS
2
C
OUTPUT CHARACTERISTICS
= 25°C
3 5 7
= 20V
4
MITSUBISHI Nch POWER MOSFET
10V
10
@
5V
1
(TYPICAL)
8
HIGH-SPEED SWITCHING USE
2
3 5 7
Min.
900
±30
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
2
12
10
2
T
Pulse Test
2
C
Limits
16
3.08
4.62
Typ.
770
3.5
1.0
= 25°C
77
13
15
15
90
25
FS3SM-18A
—
—
—
—
—
3 5 7
3
DS
DS
4.5V
(V)
(V)
4V
10
20
tw = 10ms
100ms
1ms
10ms
100ms
DC
Max.
3
4.00
6.00
1.25
±10
1.5
—
—
—
—
—
—
—
—
—
—
1
4
Feb.1999
°C/W
Unit
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A