FS40SM-6 Mitsubishi Electric Semiconductor, FS40SM-6 Datasheet - Page 4

• Manufacturer Part Number: FS40SM-6
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
–1
8
4
0
7
5
3
2
7
5
3
2
1
0
0
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Tch = 25°C
I
D
–50
–50
= 3A
ON-STATE RESISTANCE VS.
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
CHANNEL TEMPERATURE
GATE-SOURCE VOLTAGE
10
GATE CHARGE Q
VS.GATE CHARGE
0
0
(TYPICAL)
(TYPICAL)
(TYPICAL)
20
50
50
30
100
100
600V
V
400V
g
DS
(nC)
V
I
Pulse Test
D
V
I
= 250V
40
GS
D
= 1/2I
GS
= 1mA
= 10V
150
150
= 0V
D
50
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
–4
D = 1.0
0.5
0.2
0.1
2 3 57
5.0
4.0
3.0
2.0
1.0
10
8
6
4
2
0
0
10
0
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
SOURCE-DRAIN VOLTAGE V
–3
0.05
0.02
0.01
Single Pulse
–50
2 3 57
FORWARD CHARACTERISTICS
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
0.8
SOURCE-DRAIN DIODE
PULSE WIDTH t
10
CHARACTERISTICS
MITSUBISHI Nch POWER MOSFET
–2
0
2 3 57
(TYPICAL)
1.6
(TYPICAL)
HIGH-SPEED SWITCHING USE
T
75°C
25°C
C
50
10
= 125°C
–1
2.4
2 3 5710
100
w
(s)
V
Pulse Test
V
I
D
GS
3.2
DS
0
FS3SM-18A
= 1mA
2 3 5710
SD
= 0V
= 10V
150
(V)
4.0
1
2 3 5710
Feb.1999
2