FS40SM-6 Mitsubishi Electric Semiconductor, FS40SM-6 Datasheet - Page 3

• Manufacturer Part Number: FS40SM-6
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
50
40
30
20
10
10
0
8
6
4
2
0
3
2
7
5
3
2
7
5
3
2
7
5
3
3
2
1
0
0
2
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
Tch = 25°C
f = 1MH
V
3 5 7
GS
TRANSFER CHARACTERISTICS
DRAIN-SOURCE VOLTAGE
= 0V
GATE-SOURCE VOLTAGE
ON-STATE VOLTAGE VS.
4
4
10
Z
CAPACITANCE VS.
0
2
(TYPICAL)
(TYPICAL)
(TYPICAL)
3 5 7
8
8
10
12
12
1
2
3 5 7
T
Pulse Test
T
V
Pulse Test
C
C
16
DS
16
= 25°C
= 25°C
GS
GS
I
DS
D
= 50V
10
= 6A
Coss
Crss
Ciss
(V)
(V)
(V)
3A
1A
2
20
20
2
10
10
10
10
10
10
10
–1
10
10
10
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
3
2
1
FORWARD TRANSFER ADMITTANCE
–1
–1
–1
T
Pulse Test
C
SWITCHING CHARACTERISTICS
2
= 25°C
ON-STATE RESISTANCE VS.
MITSUBISHI Nch POWER MOSFET
2 3
2 3
3 5 7
DRAIN CURRENT I
DRAIN CURRENT I
DRAIN CURRENT I
VS.DRAIN CURRENT
HIGH-SPEED SWITCHING USE
DRAIN CURRENT
10
5 7
5 7
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
V
2
GS
10
10
3 5 7
= 10V
0
0
125°C
Tch = 25°C
V
V
R
DD
GS
GEN
10
75°C
2 3
2 3
= 200V
= 10V
20V
FS3SM-18A
= R
1
D
D
D
V
Pulse Test
T
2
(A)
(A)
(A)
t
t
t
t
DS
GS
d(off)
f
r
d(on)
C
3 5 7
= 25°C
= 10V
= 50
5 7
5 7
10
10
10
1
1
2
Feb.1999