BUL742 STMicroelectronics, BUL742 Datasheet

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BUL742

Manufacturer Part Number
BUL742
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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BUL742
Manufacturer:
NIEC
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Part Number:
BUL742
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ST
0
Part Number:
BUL742A
Manufacturer:
ST
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Part Number:
BUL742AC
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ST
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Part Number:
BUL742C
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SANKEN
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BUL742C
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ST
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Part Number:
BUL742CFP/
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ST
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APPLICATIONS
DESCRIPTION
The BUL742 is manufactured using high voltage
Multi
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
June 2001
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
LARGE RBSOA
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage
(I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Storage Temperature
Max. Operating Junction Temperature
®
C
= 0, I
B
= 0.75 A, t
technology for
Parameter
p
<5 ms)
p
< 10 s, T
p
<5 ms)
B
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
j
high
< 150
o
C)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
BV
Value
TO-220
900
400
150
70
4
8
2
4
EBO
1
2
BUL742
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/5

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BUL742 Summary of contents

Page 1

... LARGE RBSOA APPLICATIONS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA ...

Page 2

... BUL742 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage ...

Page 3

... Safe Operating Areas Reverse Biased SOA Derating Curve BUL742 3/5 ...

Page 4

... BUL742 DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3.93 2.60 3.85 inch MIN. TYP. MAX. 0.173 0.181 0.048 0.052 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.202 0.094 0.106 0.394 0.409 ...

Page 5

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com BUL742 5/5 ...

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