STD100NH03L ST Microelectronics, STD100NH03L Datasheet - Page 2

• Manufacturer Part Number: STD100NH03L
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

STD100NH03L
THERMAL DATA
(#)
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/11
Rthj-case
Rthj-amb
When Mounted on 1 inch
V
Rthj-pcb
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
(*)
I
I
C
DS(on)
C
GS(th)
C
fs (5)
GSS
DSS
R
T
oss
rss
iss
G
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
2
Parameter
Parameter
Parameter
FR-4 board, 2 oz of Cu.
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
V
D
(#)
DS
DS
GS
DS
GS
GS
DS
DS
= 250 µA, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating T
= V
= 10 V
= ± 20V
= 10 V
= 5 V
= 15V f = 1 MHz V
Test Conditions
Test Conditions
Test Conditions
GS
GS
= 0
I
I
I
I
D
D
D
D
C
= 250 µA
= 30 A
= 30 A
= 30 A
= 125°C
GS
Max
Max
Max
= 0
Min.
Min.
Min.
30
1
0.0060
0.005
100
275
4100
1.5
Typ.
Typ.
Typ.
43
680
1.8
1.3
40
70
0.0055
0.0105
Max.
±100
Max.
Max.
2.5
10
1
°C/W
°C/W
°C/W
°C
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
S