STD12N06 ST Microelectronics, STD12N06 Datasheet
STD12N06
Manufacturer Part Number
STD12N06
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1996
STD12N05
STD12N06
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I
V
D M
V
V
P
T
DG R
I
I
T
stg
D S
GS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
V
50 V
60 V
= 0.1
DSS
< 0.15
< 0.15
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
12 A
12 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
STD12N05
(Suffix ”-1”)
TO-251
IPAK
50
50
-65 to 175
Value
1
175
0.3
12
48
45
8
20
2
3
STD12N06
STD12N05
STD12N06
60
60
(Suffix ”T4”)
TO-252
DPAK
1
W/
Unit
3
o
o
W
V
V
V
A
A
A
C
C
o
1/10
C
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