STD12NE06L ST Microelectronics, STD12NE06L Datasheet

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STD12NE06L

Manufacturer Part Number
STD12NE06L
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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Part Number:
STD12NE06L
Manufacturer:
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STD12NE06L
Manufacturer:
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Part Number:
STD12NE06L @@@@@@@@@@
Manufacturer:
ST
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Part Number:
STD12NE06L-T4
Manufacturer:
ST
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Part Number:
STD12NE06L-TR
Manufacturer:
ST
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Part Number:
STD12NE06LT4
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
Size ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
January 2000
STD12NE06L
Symb ol
dv/dt(
CHARACTERIZATION
& REEL
I
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
V
DM
V
V
T
P
DGR
I
I
T
GS
st g
DS
D
D
tot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
N - CHANNEL 60V - 0.09
DS(on)
V
60 V
= 0.09
DSS
unique
< 0.12
Parameter
R
DS(on)
c
”Single
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
12 A
Feature
= 25
= 100
I
D
o
C
o
STripFET
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
12 A, di/dt
(Suffix ”-1”)
- 12A TO-251/TO-252
TO-251
IPAK
200 A/ s, V
POWER MOSFET
-65 to 175
Value
0.23
175
STD12NE06L
60
60
12
48
35
8
6
1
20
2
DD
3
V
(BR)DSS
(Suffix ”T4”)
, T
TO-252
DPAK
j
T
JMAX
1
W /
Unit
V/ns
o
o
3
W
V
V
V
A
A
A
C
C
o
C
1/9

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STD12NE06L Summary of contents

Page 1

... IPAK TO-251 (Suffix ”-1”) Feature INTERNAL SCHEMATIC DIAGRAM = 100 di/dt 200 STD12NE06L POWER MOSFET DPAK TO-252 (Suffix ”T4”) Value Unit ...

Page 2

... STD12NE06L THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting T ...

Page 3

... GS (see test circuit, figure 5) Test Con ditions di/dt = 100 150 (see test circuit, figure 5) Thermal Impedance STD12NE06L Min. Typ. Max. Unit Min. Typ. Max. Unit 9 12 ...

Page 4

... STD12NE06L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STD12NE06L Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STD12NE06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... L2 0.8 L2 MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 STD12NE06L inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E 7/9 ...

Page 8

... STD12NE06L TO-252 (DPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 DETAIL ”A” L2 8/9 mm MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 0.8 1 0.023 inch TYP. MAX. 0.094 0.043 0.009 0.035 ...

Page 9

... The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa n - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES http://www.st.com . STD12NE06L 9/9 ...

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