STD2NA50 ST Microelectronics, STD2NA50 Datasheet

Page 1

... N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR I DS(on) D < 100 STD2NA50 PRELIMINARY DATA IPAK DPAK TO-251 TO-252 (Suffix "-1") (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM Value 500 500 30 2.2 1.4 8.8 45 0.36 -65 to 150 150 3 1 ...

Page 2

... STD2NA50 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting Repetitive Avalanche Energy ...

Page 3

... Test Conditions V = 400 2 4 Test Conditions 2.2 A di/dt = 100 100 150 DD j STD2NA50 Min. Typ. Max 350 18 25 5.5 7 Min. Typ. Max Min. Typ. Max. 2.2 8 1.6 380 o C 4.4 ...

Page 4

... STD2NA50 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 4/6 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 5

... L2 L4 0.6 DETAIL "A" MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 0.8 1 0.023 STD2NA50 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 DETAIL "A" 0068772-B 5/6 ...

Page 6

... STD2NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...