STD2NB40 ST Microelectronics, STD2NB40 Datasheet

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STD2NB40

Manufacturer Part Number
STD2NB40
Description
N-CHANNEL MOSFET
Manufacturer
ST Microelectronics
Datasheet

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STD2NB40
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ST
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STD2NB40
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Quantity:
12 500
Part Number:
STD2NB40
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Part Number:
STD2NB40-1
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DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
July 1999
STD2NB40
Symbol
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
dv/dt
DM
V
V
P
T
DGR
I
I
T
stg
DS
GS
D
D
tot
TYPE
( )
j
DS(on)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
per area, exceptional avalanche
400 V
V
= 3.5
DSS
N - CHANNEL 400V - 3.5 - 2A - IPAK/DPAK
R
< 4
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
2 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
2A, di/dt
INTERNAL SCHEMATIC DIAGRAM
(Suffix "-1")
TO-251
IPAK
200 A/ s, V
-65 to 150
DD
1
Value
1.26
0.32
400
400
150
3.5
2
40
2
8
30
V
3
STD2NB40
(BR)DSS
PRELIMINARY DATA
, Tj
MOSFET
(Suffix "T4")
TO-252
DPAK
T
JMAX
1
W/
V/ns
Unit
o
o
3
W
V
V
V
A
A
A
C
C
o
C
1/6

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STD2NB40 Summary of contents

Page 1

... DS(on) D < Parameter = 100 STD2NB40 MOSFET PRELIMINARY DATA IPAK DPAK TO-251 TO-252 (Suffix "-1") (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM Value 400 400 0.32 3.5 -65 to 150 150 2A, di/dt ...

Page 2

... STD2NB40 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... 4 Test Conditions di/dt = 100 100 150 STD2NB40 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 2 ...

Page 4

... STD2NB40 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 4/6 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 5

... H 9.35 L2 0.8 L4 0.6 H DETAIL "A" MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 L4 STD2NB40 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 DETAIL "A" 0068772-B 5/6 ...

Page 6

... STD2NB40 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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