RC28F640P33B85 Numonyx, RC28F640P33B85 Datasheet - Page 39

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RC28F640P33B85

Manufacturer Part Number
RC28F640P33B85
Description
Numonyx? Strataflash Embedded Memory
Manufacturer
Numonyx
Datasheet

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Numonyx™ StrataFlash
Figure 25: Write-to-Synchronous Read Timing
Note:
7.5
Table 20: Program and Erase Specifications
November 2007
Order Number: 314749-05
Address [A]
Data [D/Q]
W200
W200
W251
W451
W452
WE# [W]
RST# [P]
WAIT [T]
Num
OE# [G]
CE# [E}
ADV#
CLK
WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR 10=0, WAIT asserted low).
t
t
t
t
t
PROG/W
PROG/W
BUFF
BEFP/W
BEFP/Setup
Symbol
W1
W2
Program and Erase Characteristics
Program
Time
Program
Time
Program
®
Embedded Memory (P33)
W5
W3
W3
W4
Parameter
Single word - 130nm
Single word - 65nm
Single cell
Single word
32-word buffer
Single word
BEFP Setup
D
Buffered Enhanced Factory Programming
W7
Conventional Word Programming
W6
W18
W8
W19
Buffered Programming
W20
R11
R11
Erase and Suspend
R302
R303
R104
R104
R301
Min
n/a
n/a
-
-
-
-
-
R306
R106
V
Typ
125
440
n/a
n/a
90
90
30
PPL
R15
R3
Max
200
150
200
880
n/a
n/a
R2
60
Min
R4
5
-
-
-
-
-
-
V
Typ
125
340
85
30
85
10
R304
PPH
-
R307
Max
190
150
190
680
60
-
-
Q
Unit
µs
µs
µs
R304
R305
Datasheet
Note
1,2
Q
1
1
1
s
39

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