RC28F640P33B85 Numonyx, RC28F640P33B85 Datasheet - Page 6

• Manufacturer Part Number: RC28F640P33B85
• Description: Numonyx? Strataflash Embedded Memory
• Manufacturer: Numonyx

1.0
1.1
1.2
Datasheet
6
3.0 V :
9.0 V :
Block :
Main block :
Parameter block :
Top parameter device :
Bottom parameter device :
BEFP :
CUI :
MLC :
OTP :
PLR :
PR :
RCR :
RFU :
SR :
WSM :
Introduction
This document provides information about the Numonyx™ StrataFlash
Memory (P33) device and describes its features, operation, and specifications.
P33 is the latest generation of Numonyx™ StrataFlash
64-Mbit up through 512-Mbit densities, the P33 flash memory device brings reliable,
two-bit-per-cell storage technology to the embedded flash market segment. Benefits
include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance
synchronous-burst read mode, fast asynchronous access times, low power, flexible
security options, and three industry standard package choices.
P33 product family is manufactured using Intel
technology. The P33 product family is also planned on the Numonyx™ 65nm process
lithography. 65nm AC timing changes are noted in this datasheet, and should be taken
into account for all new designs
Nomenclature
Acronyms
V
V
A group of bits, bytes, or words within the flash memory array that erase
simultaneously. The Numonyx™ StrataFlash
sizes: 32 KByte and 128 KByte.
An array block that is usually used to store code and/or data. Main blocks are larger
than parameter blocks.
An array block that may be used to store frequently changing data or small system
parameters that traditionally would be stored in EEPROM.
A device with its parameter blocks located at the highest physical address of its
memory map.
A device with its parameter blocks located at the lowest physical address of its
memory map.
Buffer Enhanced Factory Programming
Command User Interface
Multi-Level Cell
One-Time Programmable
Protection Lock Register
Protection Register
Read Configuration Register
Reserved for Future Use
Status Register
Write State Machine
CC
PP
voltage range of 8.5 V – 9.5 V
(core) and V
CCQ
(I/O) voltage range of 2.3 V – 3.6 V
Numonyx™ StrataFlash
*
130 nm ETOX™ VIII process
®
®
Embedded Memory (P33) has two block
memory devices. Offered in
®
Embedded Memory (P33)
Order Number: 314749-05
®
Embedded
November 2007