RC28F640P33B85 Numonyx, RC28F640P33B85 Datasheet - Page 96

• Manufacturer Part Number: RC28F640P33B85
• Description: Numonyx? Strataflash Embedded Memory
• Manufacturer: Numonyx

Appendix C Ordering Information for SCSP Products
Figure 48: Decoder for SCSP Devices
Table 48: Valid Combinations for Dual- Die Products - 130nm
Note:
Datasheet
96
RD48F2000P0XBQ0
RD48F2000P0XTQ0
PF48F2000P0XBQ0
PF48F2000P0XTQ0
* The “B” parameter shown in the table and chart above is used for both “top” and “bottom” options in 512-Mbit densities.
The “T” (Top Boot) configuration is no longer available as it was identical to the Bottom Boot configuration in this density.
64-Mbit
48 F = Flash Memory only
0 = No die
2 = 64- Mbit
3 = 128- Mbit
4 = 256- Mbit
P =
0 = No die
RD = Intel
PF = Intel
RC = 64- Ball Easy BGA , leaded
PC = 64- Ball Easy BGA , lead-free
TE = 56- Lead TSOP, leaded
JS = 56- Lead TSOP, lead- free
Flash Density
Product Family
Package Designator
Group Designator
Intel StrataFlash® Embedded Memory
®
®
SCSP, lead- free
SCSP, leaded
RD48F3000P0XBQ0
RD48F3000P0XTQ0
PF48F3000P0XBQ0
PF48F3000P0XTQ0
R
D 4
128-Mbit
8
F 4 0
0 0
PF48F4000P0XBQ0
PF48F4000P0XTQ0
RD48F4000P0XBQ0
RD48F4000P0XTQ0
P 0 X B
§ §
Numonyx™ StrataFlash
256-Mbit
Q
0
V
V
I/ O Voltage, CE# Configuration
X = Individual Chip Enable ( s)
(
T = Top Parameter, Non Mux
T = Virtual Chip Enable ( s)
0 =
0 = Discrete ballout
B = Bottom Parameter , Non Mux
Q = QUAD+ ballout
Parameter, Mux Configuration
CC
CCQ
Device Details
datasheet for details )
Ballout Designator
refer to the latest version of the
= 2. 3 V – 3. 6 V
= 2. 3 V – 3. 6 V
Original version of the product
RD48F4400P0TBQ0
PF48F4400P0TBQ0
RC48F4400P0TB00
PC48F4400P0TB00
TE48F4400P0TB00
JS48F4400P0TB00
®
Embedded Memory (P33)
Order Number: 314749-05
512-Mbit
November 2007
*