GP250MHB06S Dynex Semiconductor, GP250MHB06S Datasheet
GP250MHB06S
Related parts for GP250MHB06S
GP250MHB06S Summary of contents
Page 1
... The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion ...
Page 2
... GP250MHB06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
Page 3
... V = 20V 10mA 15V 250A 15V 250A 125˚ 1ms 250A 250A 125˚ 25V 0V 1MHz CE GE GP250MHB06S Typ. Max. Units - - 7 2.2 2 2.3 2 250 500 A - 1.1 1 ...
Page 4
... GP250MHB06S INDUCTIVE SWITCHING CHARACTERISTICS T = 25˚C unless stated otherwise j Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON t Diode reverse recovery time rr Q Diode reverse recovery charge ...
Page 5
... C 10.0 7 200 250 300 0 - (A) C Fig.6 Typical turn-on energy vs collector current GP250MHB06S V = 20/15V ge = 125˚ 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage (V) ce Fig.4 Typical output characteristics = 15V = 300V 100 150 200 250 Collector current, I ...
Page 6
... GP250MHB06S 25˚ 15V 300V 100 150 Collector current, I Fig.7 Typical turn-off energy vs collector current 25˚ 15V 300V 100 150 Collector current, I Fig.9 Typical diode turn-off energy vs collector current 6/10 Caution: This device is sensitive to electrostatic discharge ...
Page 7
... C Fig.12 Diode typical forward characteristics 10000 I max. (single pulse) C 1000 100 600 800 - (V) ce Fig.14 Forward bias safe operating area (DC and single pulse) GP250MHB06S T = 125˚ 25˚C j 1.00 0.25 0.50 0.75 Foward voltage ( 100 1ms p 10 ...
Page 8
... GP250MHB06S 1000 100 10 1 0.001 0.01 0.1 Pulse width, t Fig.15 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Diode Transistor (s) p www.dynexsemi.com ...
Page 9
... Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 28 0 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Module outline type code: M GP250MHB06S Fast on tabs 9/10 ...
Page 10
... GP250MHB06S POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...