GP250MHB06S Dynex Semiconductor, GP250MHB06S Datasheet - Page 5

• Manufacturer Part Number: GP250MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
400
350
500
450
300
250
150
100
7.5
5.0
2.5
200
50
0
Fig.5 Typical turn-on energy vs collector current
0
0
0
T
V
V
Common emitter
T
j
GE
CE
case
= 25˚C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig.3 Typical output characteristics
= 300V
= 15V
= 25˚C
50
Collector-emitter voltage, V
Collector current, I
100
150
V
ge
= 20/15V
C
200
- (A)
ce
- (V)
A: R
B: R
C: R
250
V
V
g
g
ge
ge
g
A
B
C
= 15
= 10
= 5
= 12V
= 10V
300
5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
400
350
500
450
300
250
150
100
200
0
Fig.6 Typical turn-on energy vs collector current
50
0
0
0
T
V
V
j
GE
CE
Common emitter
T
= 125˚C
case
Fig.4 Typical output characteristics
= 300V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
= 15V
50
= 125˚C
Collector-emitter voltage, V
Collector current, I
100
150
GP250MHB06S
C
V
200
- (A)
ge
= 20/15V
ce
A: R
B: R
C: R
- (V)
250
g
g
V
V
g
A
B
C
= 15
= 10
= 5
ge
ge
= 12V
= 10V
300
5/10
5