GP250MHB06S Dynex Semiconductor, GP250MHB06S Datasheet - Page 8

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GP250MHB06S

Manufacturer Part Number
GP250MHB06S
Description
Half Bridge IGBT Module
Manufacturer
Dynex Semiconductor
Datasheet
GP250MHB06S
1000
Diode
Transistor
100
10
1
10
0.001
0.01
0.1
1
Pulse width, t
- (s)
p
Fig.15 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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