GP250MHB06S Dynex Semiconductor, GP250MHB06S Datasheet - Page 6

• Manufacturer Part Number: GP250MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP250MHB06S
6/10
Fig.9 Typical diode turn-off energy vs collector current
40
35
30
25
20
15
10
5
0
Fig.7 Typical turn-off energy vs collector current
5
4
3
2
1
0
0
0
T
V
V
T
V
V
j
j
GE
CE
GE
CE
= 25˚C
= 25˚C
= 15V
= 300V
= 15V
= 300V
50
50
Collector current, I
Collector current, I
100
100
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
150
150
C
C
200
200
- (A)
- (A)
A: R
B: R
C: R
250
250
R
R
R
g
g
g
g
g
A
g
B
C
= 15
= 10
= 5
= 10
= 15
= 5
300
300
Fig.10 Typical diode turn-off energy vs collector current
40
35
30
25
20
15
10
5
0
Fig.8 Typical turn-off energy vs collector current
5
4
3
2
1
0
0
0
T
V
V
T
V
V
j
j
GE
CE
GE
CE
= 125˚C
= 125˚C
= 15V
= 300V
= 15V
= 300V
50
50
Collector current, I
Collector current, I
100
100
150
150
www.dynexsemi.com
C
C
200
200
- (A)
- (A)
A: R
B: R
C: R
250
250
R
R
R
g
g
g
g
g
A
g
B
C
= 15
= 10
= 5
= 10
= 15
= 5
300
300