GP350MHB06S Dynex Semiconductor, GP350MHB06S Datasheet
GP350MHB06S
Related parts for GP350MHB06S
GP350MHB06S Summary of contents
Page 1
... The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion ...
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... GP350MHB06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... CES 20V 10mA 15V 350A 15V 350A 125˚ 1ms 350A 350A 125˚ 25V 0V 1MHz CE GE GP350MHB06S Typ. Max. Units - - 7 2.0 2 2.2 2 215 700 - 1.51 2. 1.5 2 ...
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... GP350MHB06S INDUCTIVE SWITCHING CHARACTERISTICS T = 25˚C unless stated otherwise j Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON t Diode reverse recovery time rr Q Diode reverse recovery charge ...
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... 250 300 350 0 - (A) C Fig.6 Typical turn-on energy vs collector current GP350MHB06S V = 20/15/12/10V ge = 125˚C 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage (V) ce Fig.4 Typical output characteristics = 15V 100 150 200 250 ...
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... GP350MHB06S 25˚ 15V 300V 100 150 200 Collector current, I Fig.7 Typical turn-off energy vs collector current 3 25˚ 15V GE 3 300V CE 2.5 2.0 1.5 1.0 0 100 150 200 Collector current, I Fig.9 Typical diode turn-off energy vs collector current 6/10 Caution: This device is sensitive to electrostatic discharge ...
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... C Fig.12 Diode typical forward characteristics 10000 I max. (single pulse) C 1000 100 10 1 600 800 1 - (V) ce Fig.14 Forward bias safe operating area GP350MHB06S T = 125˚ 25˚C j 0.8 1.6 0.4 0.6 1.0 1.2 1.4 Foward voltage ( 100 1ms p 10 100 Collector-emitter voltage, V ...
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... GP350MHB06S 1000 100 10 1 0.001 0.01 0.1 Pulse width, t Fig.15 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Diode Transistor (s) p www.dynexsemi.com ...
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... Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 28 0 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Module outline type code: M GP350MHB06S Fast on tabs 9/10 ...
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... GP350MHB06S HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...