GP350MHB06S Dynex Semiconductor, GP350MHB06S Datasheet - Page 5

• Manufacturer Part Number: GP350MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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400
350
450
300
250
150
100
200
20
18
16
14
12
10
50
8
6
4
2
0
0
Fig.5 Typical turn-on energy vs collector current
0
0
Common emitter
T
T
V
V
case
j
GE
CE
= 25˚C
Fig.3 Typical output characteristics
= 15V
= 300V
50
= 25˚C
0.5
Collector-emitter voltage, V
100
Collector current, I
1.0
150
1.5
200
V
C
ge
2.0
- (A)
= 20/15/12/10V
250
ce
- (V)
A: R
B: R
C: R
2.5
300
g
g
g
A
= 15
= 10
= 5
B
C
350
3.0
400
350
450
300
250
200
150
100
45
40
35
30
25
20
15
10
50
5
0
0.5
0
0
Fig.6 Typical turn-on energy vs collector current
T
V
V
Common emitter
T
j
case
GE
CE
= 125˚C
= 300V
= 15V
Fig.4 Typical output characteristics
50
= 125˚C
1.0
Collector-emitter voltage, V
100
Collector current, I
1.5
150
2.0
200
V
C
GP350MHB06S
2.5
ge
- (A)
250
= 20/15/12/10V
ce
- (V)
A: R
B: R
C: R
3.0
300
g
g
g
A
= 15
= 10
= 5
B
C
350
3.5
5/10