GP350MHB06S Dynex Semiconductor, GP350MHB06S Datasheet - Page 7

• Manufacturer Part Number: GP350MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1400
1200
1000
800
600
400
200
600
500
300
200
100
700
400
0
0
0
0
T
V
R
t
t
Fig.11 Typical switching characteristics
d(off)
d(on)
Fig.13 Reverse bias safe operating area
t
j
ge
g
r
= 125˚C
t
= 5
f
50
= 15V
Collector-emitter voltage, V
200
100
Collector current, I
150
400
200
C
- (A)
250
ce
600
T
V
V
R
- (V)
j
GE
CE
g
= 125˚C
= 5
= 300V
= 15V
300
350
800
10000
1000
300
150
100
450
400
350
250
200
100
50
10
0
1
0
1
Fig.12 Diode typical forward characteristics
I
C
Fig.14 Forward bias safe operating area
max. (single pulse)
0.2
Collector-emitter voltage, V
0.4
Foward voltage, V
0.6
10
0.8
T
j
1.0
= 125˚C
GP350MHB06S
F
t
100
p
1.2
- (V)
= 1ms
ce
T
- (V)
1.4
j
= 25˚C
100 s
50 s
1.6
1000
1.8
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