GP350MHB06S Dynex Semiconductor, GP350MHB06S Datasheet - Page 6

• Manufacturer Part Number: GP350MHB06S
• Description: Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP350MHB06S
6/10
Fig.9 Typical diode turn-off energy vs collector current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
30
25
20
15
10
5
0
Fig.7 Typical turn-off energy vs collector current
0
0
0
T
V
V
T
V
V
j
GE
CE
j
GE
CE
= 25˚C
= 25˚C
= 15V
= 300V
= 15V
= 300V
50
50
100
100
Collector current, I
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
150
150
200
200
C
C
- (A)
- (A)
250
250
A: R
B: R
C: R
B
300
R
R
300
R
g
g
g
g
g
g
= 15
= 10
= 5
= 10
= 15
= 5
A
C
350
350
Fig.10 Typical diode turn-off energy vs collector current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
45
40
35
30
25
20
15
10
5
0
Fig.8 Typical turn-off energy vs collector current
0
0
0
T
V
V
T
V
V
j
GE
CE
j
GE
CE
= 125˚C
= 125˚C
= 300V
= 15V
= 300V
50
= 15V
50
100
100
Collector current, I
Collector current, I
150
150
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200
200
C
C
- (A)
- (A)
250
250
A: R
B: R
C: R
B
R
R
300
R
300
g
g
g
g
g
g
= 15
= 10
= 5
= 10
= 15
= 5
A
C
350
350