BTB06-600BW ST Microelectronics, BTB06-600BW Datasheet - Page 4

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BTB06-600BW

Manufacturer Part Number
BTB06-600BW
Description
SNUBBERLESS/ LOGIC LEVEL & STANDARD
Manufacturer
ST Microelectronics
Datasheet

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BTA/BTB06 Series
4/6
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
1E+0
Fig. 5:
number of cycles.
1E-1
1E-2
0
0
P (W)
1
ITSM (A)
1E-3
K=[Zth/Rth]
1
Repetitive
Tc=105°C
Zth(j-c)
Surge peak on-state current versus
1E-2
10
2
Number of cycles
1E-1
Tj initial=25°C
Non repetitive
IT(RMS)(A)
Zth(j-a)
tp(s)
3
1E+0
100
4
1E+1
t=20ms
One cycle
1E+2 5E+2
5
1000
6
7
6
5
4
3
2
1
0
100
1000
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 4:
values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
10
100
0
IT(RMS) (A)
10
1
0.5
0.01
ITM (A)
ITSM (A), I²t (A²s)
Vto = 0.85 V
Rd = 60 m
Tj max.
1.0
25
dI/dt limitation:
On-state characteristics
50A/µs
1.5
0.10
2.0
50
Tj=Tj max
2.5
Tc(°C)
tp (ms)
VTM(V)
3.0
75
1.00
3.5
4.0
100
BTA
(maximum
Tj initial=25°C
ITSM
I²t
4.5
BTB
10.00
125
5.0

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