BTB08-400A ST Microelectronics, BTB08-400A Datasheet

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BTB08-400A

Manufacturer Part Number
BTB08-400A
Description
SENSITIVE GATE TRIACS
Manufacturer
ST Microelectronics
Datasheet

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BTB08-400A
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ST
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FEATURES
.
.
DESCRIPTION
The BTA/BTB08 S/A triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
ABSOLUTE RATINGS (limiting values)
March 1995
VERY LOW I
LOW I
BTA Family :
INSULATING VOLTAGE = 2500V
(UL RECOGNIZED : E81734)
I T(RMS)
Symbol
Symbol
V DRM
V RRM
I TSM
Tstg
dI/dt
I 2 t
Tj
Tl
H
= 25mA max
RMS on-state current
(360 conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25 C )
I 2 t value
Critical rate of rise of on-state current
Gate supply : I G = 50mA di G /dt = 0.1A/ s
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Repetitive peak off-state voltage
Tj = 110 C
GT
= 10mA max
Parameter
(RMS)
Parameter
400 S/A
BTA
BTB
400
tp = 8.3 ms
SENSITIVE GATE TRIACS
tp = 10 ms
tp = 10 ms
Tc = 75 C
Tc = 80 C
F = 50 Hz
Repetitive
Repetitive
Non
BTA / BTB08-
600 S/A
A1
600
A2
G
TO220AB
(Plastic)
- 40 to + 150
- 40 to + 110
BTA08 S/A
BTB08 S/A
Value
260
84
80
32
10
50
8
700 S/A
700
A/ s
Unit
Unit
A 2 s
A
A
V
C
C
C
1/5

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BTB08-400A Summary of contents

Page 1

... H BTA Family : INSULATING VOLTAGE = 2500V (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB08 S/A triac family are high perform- ance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ...

Page 2

... BTA08 S/A / BTB08 S/A THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values (AV 10W ( ELECTRICAL CHARACTERISTICS Symbol Test Conditions =12V (DC = =12V ...

Page 3

... Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (curves are cut off by (dI/dt)c limitation) Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances heatsink + contact (BTB). BTA08 S/A / BTB08 S/A V DRM / V RRM Sensitivity Specification V S 400 X ...

Page 4

... BTA08 S/A / BTB08 S/A Fig.5 : Relative variation of thermal impedance versus pulse duration. Zth/Rth j-c) 0.1 0.01 1E-3 1E-2 1E Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.9 : On-state characteristics (maximum values). 4/5 Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zt h(j-a) tp( s) ...

Page 5

... Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. REF. Min 10.20 B 14.23 C 12. 2.54 H 4. 0. 4.58 O 0.80 P 0.64 BTA08 S/A / BTB08 S/A DIMENSIONS Millimeters Inches Max. Min. Max. 10.50 0.401 0.413 15.87 0.560 0.625 14.70 0.500 0.579 6.85 0.230 0.270 4.50 0.178 3.00 0.100 0.119 4.82 0.176 0.190 4.00 0.140 0.158 1.39 0.045 0.055 0.65 0.013 0.026 2 ...

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