BTB12-600 ST Microelectronics, BTB12-600 Datasheet - Page 5

• Manufacturer Part Number: BTB12-600
• Description: 12A TRIACS
• Manufacturer: ST Microelectronics

100
1000
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
Fig. 4:
values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
10
100
0.1
1
10
0.5
0.01
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITM (A)
B
ITSM (A), I²t (A²s)
C
SW
dI/dt limitation:
Tj max
1.0
50A/µs
On-state characteristics (maximum
1.5
Tj=25°C
1.0
0.10
2.0
(dV/dt)c (V/µs)
2.5
tp (ms)
VTM(V)
3.0
10.0
1.00
3.5
4.0
Vto = 0.85 V
Rd = 35 m
ITSM
Tj initial=25°C
BW/CW/T1235
Tj max.
I²t
4.5
10.00
100.0
5.0
2.5
2.0
1.5
1.0
0.5
0.0
130
120
110
100
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
0
-40
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
1
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
ITSM (A)
IH & IL
-20
IGT
Repetitive
25
Tc=90°C
0
BTA/BTB12 and T12 Series
20
10
Tj initial=25°C
Non repetitive
Number of cycles
50
40
Tj (°C)
Tj(°C)
60
75
100
80
100
100
t=20ms
One cycle
120
1000
140
125
5/7