BTB16-600BW ST Microelectronics, BTB16-600BW Datasheet - Page 5

• Manufacturer Part Number: BTB16-600BW
• Description: 16A TRIACS
• Manufacturer: ST Microelectronics

200
100
3000
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Fig.
values)
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 8:
decrease of main current versus (dV/dt)c (typical
values).
10
100
0.1
1
0.5
0.01
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITM (A)
ITSM (A), I²t (A²s)
B
4: On-state
C
1.0
dI/dt limitation:
50A/µs
Relative variation of critical rate of
SW
1.5
Tj=25°C
1.0
0.10
2.0
(dV/dt)c (V/µs)
Tj max
characteristics
2.5
VTM (V)
tp (ms)
3.0
10.0
1.00
3.5
4.0
ITSM
Vto = 0.85 V
Rd = 25 m
BW/CW/T1635
(maximum
Tj initial=25°C
Tj max:
I²t
4.5
100.0
10.00
5.0
180
160
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
6
5
4
3
2
1
0
80
60
40
20
0
0
-40
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
1
ITSM (A)
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IH & IL
-20
IGT
25
Repetitive
Tc=85°C
0
10
BTA/BTB16 and T16 Series
20
Tj initial=25°C
Non repetitive
Number of cycles
50
40
Tj (°C)
Tj(°C)
60
75
100
80
100
100
t=20ms
One cycle
120
1000
125
140
5/7