BTB772SA3 Cystech Electonics Corp, BTB772SA3 Datasheet - Page 2

• Manufacturer Part Number: BTB772SA3
• Description: Low Vcesat PNP Epitaxial Planar Transistor
• Manufacturer: Cystech Electonics Corp

Characteristics
Classification Of h
Characteristic Curves
BTB772SA3
*V
*V
*V
Symbol
BV
BV
BV
*h
*h
*h
*h
Range
I
Rank
I
I
Cob
CBO
CEO
EBO
CE(sat)
CE(sat)
BE(sat)
f
FE
FE
FE
FE
1000
T
CBO
CEO
EBO
100
10
1
2
3
4
1
Current gain vs Collector current
Collector current---IC(mA)
10
Min.
100
160
160
100
-50
-50
-5
-
-
-
-
-
-
-
-
(Ta=25 C)
160~320
FE
100
P
3
VCE=2V
CYStech Electronics Corp.
VCE=1V
Typ.
-0.3
80
55
-1
-
-
-
-
-
-
-
-
-
-
-
1000
VCE=5V
10000
Max.
-0.3
-0.5
500
-1
-1
-1
-2
-
-
-
-
-
-
-
-
250~500
E
MHz
Unit
μA
μA
μA
pF
10000
V
V
V
V
V
V
-
-
-
-
1000
100
10
C-E saturation voltage vs Collector current
1
1
*Pulse Test : Pulse Width 380
IC=40IB
IC=10IB
I
I
I
V
V
V
I
I
I
V
V
V
V
V
V
C
C
E
C
C
C
CB
CE
EB
CE
CE
CE
CE
CE
CB
=-100μA, I
=-1mA, I
=-50μA, I
=-400mA, I
=-2A, I
=-2A, I
=-30V, I
=-5V, I
=-2V, I
=-2V, I
=-2V, I
=-2V, I
=-5V, I
=-40V, I
=-10V, f=1MHz
10
Collector current---IC(mA)
B
B
IC=20IB
=-0.1A
=-0.2A
C
C
C
C
C
C
B
C
Test Conditions
=0
=-20mA
=-100mA
=-500mA
=-1A
=-0.1A, f=100MHz
100
B
=0
E
=0
E
=0
=0
B
=0
=-20mA
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C817A3-R
Issued Date : 2003.05.31
Revised Date:2006.05.15
Page:2/4
1000
μ
s, Duty Cycle 2%
10000