SI2303CDS Vishay Siliconix, SI2303CDS Datasheet - Page 5
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SI2303CDS
Manufacturer Part Number
SI2303CDS
Description
P-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SI2303CDS.pdf
(7 pages)
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www.DataSheet.co.kr
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
3.0
2.4
1.8
1.2
0.6
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
- Case Temperature (°C)
50
75
J(max)
3.0
2.4
1.8
1.2
0.6
0.0
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
T
150
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.0
0.8
0.6
0.4
0.2
0.0
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si2303CDS
100
www.vishay.com
125
150
5
Datasheet pdf - http://www.DataSheet4U.net/