SI2306DS Vishay Siliconix, SI2306DS Datasheet - Page 4

• Manufacturer Part Number: SI2306DS
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.vishay.com
4
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.01
10
0.1
1
- 50
0.00
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
I
T
D
J
0.4
Single Pulse
J
10
= 250 mA
- Temperature (_C)
25
= 150_C
-3
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
-2
T
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.5
0.4
0.3
0.2
0.1
0.0
12
10
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
0.1
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
- Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
- T
T
A
A
t
Time (sec)
4
1
= 25_C
= P
1
t
2
DM
Z
thJA
thJA
100
t
t
(t)
6
1
2
S-31873—Rev. C, 15-Sep-03
10
= 130_C/W
Document Number: 70827
I
D
= 3.5 A
8
100
500
500
10