SI2331DS Vishay Siliconix, SI2331DS Datasheet

no-image

SI2331DS

Manufacturer Part Number
SI2331DS
Description
P-Channel 1.8-V (G-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2331DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2331DS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72307
30-Apr-04
The
characteristics of the p-channel vertical DMOS.
model is
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
attached
extracted and optimized over the
spice
model
describes
P-Channel 1.8-V (G-S) MOSFET
the
typical
The subcircuit
55 to 125 C
electrical
SPICE Device Model Si2331DS
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
Apply for both Linear and Switching Application
Accurate over the 55 to 125 C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1

Related parts for SI2331DS

SI2331DS Summary of contents

Page 1

... This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72307 30-Apr-04 SPICE Device Model Si2331DS Apply for both Linear and Switching Application Accurate over the 55 to 125 C Temperature Range Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

... SPICE Device Model Si2331DS Vishay Siliconix SPECIFICATIONS ( UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 72307 30-Apr-04 SPICE Device Model Si2331DS =25 C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...

Related keywords