2SK3637 Panasonic Semiconductor, 2SK3637 Datasheet
2SK3637
Manufacturer Part Number
2SK3637
Description
Silicon N-channel power MOSFET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK3637.pdf
(3 pages)
www.DataSheet4U.com
Power MOSFETs
2SK3637
Silicon N-channel power MOSFET
For PDP/For high-speed switching
■ Features
■ Absolute Maximum Ratings T
Note) * : L = 0.8 mH, I
■ Electrical Characteristics T
Publication date: February 2004
• Low on-resistance, low Q
• High avalanche resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power
dissipation
Channel temperature
Storage temperature
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Parameter
Parameter
T
a
L
= 25°C
= 50 A, V
g
*
DD
Symbol
V
V
EAS
= 100 V, 1 pulse, T
T
I
T
P
I
DSS
GSS
DP
D
stg
ch
D
C
= 25°C ± 3°C
Symbol
R
Y
C
V
V
t
t
I
I
C
DS(on)
C
C
d(off)
V
d(on)
Q
DSS
GSS
t
DSS
DSF
t
t
oss
= 25°C
iss
rss
rr
th
r
f
fs
rr
−55 to +150
Rating
2 000
±30
200
200
100
150
50
3
I
I
V
V
V
V
V
V
V
R
L = 230 µH, V
I
D
DR
DR
L
DS
DS
GS
GS
DS
DS
DD
= 1 mA, V
a
= 4 Ω, V
= 50 A, V
= 25 A, di /dt = 100 A/ µs
SJG00035AED
= 25°C
= 25 V, I
= 160 V, V
= ±30 V, V
= 10 V, I
= 25 V, I
= 25 V, V
= 100 V, I
Unit
GS
mJ
°C
°C
W
V
V
A
A
Conditions
GS
D
D
D
GS
GS
DD
= 10 V
D
= 10 mA
= 25 A
= 25 A
GS
DS
= 0
= 0
= 25 A
= 0, f = 1 MHz
= 100 V
= 0
= 0
Internal Connection
5˚
1
15.5
10.9
Min
200
15
2
2
G
±0.5
±0.5
3
5.45
(4.0)
2.0
1.1
4 550
φ 3.2
Typ
750
125
390
140
210
820
29
30
75
50
±0.2
±0.1
±0.3
D
S
±0.1
TOP-3E-A1 Package
Max
−1.5
5˚
100
±1
40
4
5˚
0.7
1: Gate
2: Drain
3: Source
Unit: mm
5˚
5˚
±0.1
3.0
Unit
mΩ
µA
µA
5˚
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
±0.3
1
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2SK3637 Summary of contents
Page 1
... Power MOSFETs 2SK3637 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Q • High avalanche resistance ■ Absolute Maximum Ratings T Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power = 25° ...
Page 2
... Electrical Characteristics (Continued) T Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 3 10 Non repetitive pulse = 25°C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...