2SK3637 Panasonic Semiconductor, 2SK3637 Datasheet - Page 2

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2SK3637

Manufacturer Part Number
2SK3637
Description
Silicon N-channel power MOSFET
Manufacturer
Panasonic Semiconductor
Datasheet
2SK3637
■ Electrical Characteristics (Continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Total gate charge
Gate-source charge
Gate-drain charge
Channel-case heat resistance
Channel-atmosphere heat resistance
10
10
10
10
−1
1
3
2
1
I
I
DP
D
Drain-source voltage V
Safe operation area
1 ms
Parameter
DC
10
10 ms
100 ms
Non repetitive pulse
T
C
= 25°C
10
t = 100 µs
2
DS
( V )
10
3
Symbol
R
R
th(ch-c)
th(ch-a)
Q
Q
Q
gs
gd
g
V
V
DD
GS
C
SJG00035AED
= 10 V
= 25°C ± 3°C
= 100 V, I
Conditions
D
= 25 A
Min
Typ
85
30
12
Max
1.25
41.6
°C/W
°C/W
Unit
nC
nC
nC

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