SI4200DY Vishay Siliconix, SI4200DY Datasheet - Page 3

• Manufacturer Part Number: SI4200DY
• Description: Dual N-Channel 25 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
0.032
0.027
0.022
0.017
0.012
30
24
18
12
10
6
0
8
6
4
2
0
0
0
0
I
D
V
V
GS
DS
= 7.3 A
On-Resistance vs. Drain Current
= 10 V thru 4 V
= 12.5 V
6
2
V
V
0.5
DS
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
= 6.25 V
g
V
V
- Total Gate Charge (nC)
I
GS
GS
D
Gate Charge
- Drain Current (A)
V
12
= 4.5 V
= 10 V
DS
4
= 20 V
1.0
18
6
1.5
24
V
8
GS
= 3 V
2.0
30
10
600
450
300
150
1.5
1.3
1.1
0.9
0.7
10
8
6
4
2
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
0.5
5
V
V
DS
GS
Transfer Characteristics
0
T
C
J
C
- Drain-to-Source Voltage (V)
oss
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
1.0
T
C
25
Capacitance
V
= 125 °C
10
GS
T
C
= 4.5 V; I
= 25 °C
1.5
50
Vishay Siliconix
15
V
75
D
GS
2.0
= 6.7 A
Si4200DY
= 10 V; I
T
100
C
www.vishay.com
= - 55 °C
20
2.5
D
125
= 7.3 A
150
3.0
25
3
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