SI4431ADY Vishay Siliconix, SI4431ADY Datasheet
SI4431ADY
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SI4431ADY Summary of contents
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... 25_C 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4431ADY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET S D P-Channel MOSFET 10 secs Steady State - 30 "20 - 5.3 - 7.2 - 5 2.1 - 1.3 2.5 1.35 1.6 0. 150 Typical Maximum ...
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... Si4431ADY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71803 S-95713—Rev. C, 18-Feb-02 2000 1600 1200 25_C J 0.8 1.0 1.2 Si4431ADY Vishay Siliconix Capacitance C iss 800 C oss 400 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 7 ...
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... Si4431ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 = 250 0.2 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...