SI4433DY Vishay Siliconix, SI4433DY Datasheet

no-image

SI4433DY

Manufacturer Part Number
SI4433DY
Description
P-Channel 1.8-V (G-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4433DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4433DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4433DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet4U.com
Notes
a.
Document Number: 71663
S-04245—Rev. A, 16-Jul-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–20
(V)
0.160 @ V
0.240 @ V
0.110 @ V
J
a
G
S
S
S
= 150_C)
a
r
Parameter
Parameter
DS(on)
1
2
3
4
_
GS
GS
GS
a
a
= –2.5 V
= –1.8 V
P-Channel 1.8-V (G-S) MOSFET
= –4.5 V
Top View
(W)
SO-8
a
8
7
6
5
D
D
D
D
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
–3.9
–3.2
–2.6
= 25_C
= 85_C
= 25_C
= 85_C
(A)
_
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
thJF
I
I
GS
DS
D
S
D
G
stg
P-Channel MOSFET
D TrenchFETr Power MOSFET
D Fast Switching
D DC-DC Conversion
D Asynchronous Buck Converter
D Voltage Inverter
S
D
10 secs
Typical
–3.9
–2.8
–2.1
2.5
1.3
40
75
19
–55 to 150
–20
–10
"8
Steady State
Maximum
Vishay Siliconix
–2.9
–2.1
–1.2
1.4
0.7
50
90
25
Si4433DY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1

Related parts for SI4433DY

SI4433DY Summary of contents

Page 1

... D Asynchronous Buck Converter D Voltage Inverter P-Channel MOSFET 10 secs Steady State V –20 DS " –2.9 –3 –2.8 –2.1 I – –2.1 –1.2 S 2.5 1 1.3 0 –55 to 150 J stg Typical Maximum 40 50 thJA thJF Si4433DY Unit Unit _C/W C/W www.vishay.com 1 ...

Page 2

... Si4433DY www.DataSheet4U.com Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 71663 S-04245—Rev. A, 16-Jul-01 New Product 4 25_C J 0.8 1.0 1.2 1.4 Si4433DY Vishay Siliconix Capacitance 800 C iss 600 400 200 C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4433DY www.DataSheet4U.com Vishay Siliconix Threshold Voltage 0.4 0.3 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 4 New Product _ = 250 100 125 150 Normalized Thermal Transient Impedance, Junction-to-Ambient – ...

Related keywords