SI4838DY Vishay Siliconix, SI4838DY Datasheet
SI4838DY
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SI4838DY Summary of contents
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... 25_C 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4838DY Vishay Siliconix N-Channel MOSFET 10 secs Steady State 12 " 2.9 1.3 3.5 1.6 2.2 1 -55 to 150 Typical Maximum ...
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... Si4838DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71359 S-03662—Rev. C, 14-Apr-03 New Product 25_C J 0.8 1.0 1.2 Si4838DY Vishay Siliconix Capacitance 7500 6000 C iss 4500 3000 C oss C rss 1500 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4838DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...