SI4914DY Vishay Siliconix, SI4914DY Datasheet - Page 4

• Manufacturer Part Number: SI4914DY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si4914DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
40
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
0.4
T
J
Threshold Voltage
– Source-to-Drain Voltage (V)
T
= 150 °C
J
– Temperature (°C)
25
0.6
50
I
D
0.8
= 250 µA
75
0.01
100
T
0.1
1.0
10
J
1
100
0.1
= 25 °C
r
DS(on)
Limited
1.2
I
125
D(on)
Single Pulse
T
C
Limited
V
= 25 °C
DS
150
1.4
– Drain-to-Source Voltage (V)
Safe Operating Area
1
BV
DSS
Limited
10
200
160
120
80
40
0.10
0.08
0.06
0.04
0.02
0.00
0
0.001
I
DM
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
0.01
100
V
2
GS
– Gate-to-Source Voltage (V)
Time (sec)
4
0.1
S-61959-Rev. C, 09-Oct-06
Document Number: 72938
I
D
6
= 7 A
1
8
10
10