SUD06N10-225L Vishay Siliconix, SUD06N10-225L Datasheet
SUD06N10-225L
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SUD06N10-225L Summary of contents
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... stg Symbol t 10 sec R R thJA thJA Steady State R thJC SUD06N10-225L Vishay Siliconix D S N-Channel MOSFET Limit 100 20 6.5 3.75 8.0 6.5 5.0 1. 1.5 a –55 to 175 Typical Maximum 100 6.0 7.5 www.vishay.com FaxBack 408-970-5600 Unit V V ...
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... SUD06N10-225L Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance a Dynamic Input Capacitance ...
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... – 125 iss C oss rss 60 80 100 SUD06N10-225L Vishay Siliconix Transfer Characteristics – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 0.30 ...
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... SUD06N10-225L Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – – Junction Temperature ( C) J Maximum Avalanche Drain Current vs. Case Temperature – Case Temperature ( Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 –5 –4 ...