SUD30N03-30 Vishay Siliconix, SUD30N03-30 Datasheet - Page 2

• Manufacturer Part Number: SUD30N03-30
• Description: N-Channel MOSFET
• Manufacturer: Vishay Siliconix

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Notes
a.
b.
c.
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2-2
SUD30N03-30
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
Independent of operating temperature.
G
c
c
V l
a
O S
Parameter
c
D i C
c
c
c
c
b
b
R
i
b
300 s, duty cycle
b
b
b
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
C
V
C
Q
Q
d(on)
d(off)
GSS
DSS
I
g
Q
2%.
SM
t
oss
t
t
SD
iss
rss
fs
gs
gd
rr
r
f
g
C
V
I
I
V
V
D
V
V
V
V
GS
= 25 C)
DS
DS
GS
GS
DS
= 0 V, V
I
= 30 V, V
= 30 V, V
30 A V
30 A, V
= 15 V, V
V
= 10 V, I
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
GS
15 V V
= 30 A, di/dt = 100 A/ s
DS
Test Condition
DD
DD
I
GS
DS
DS
F
GS
DS
= 30 A, V
= 0 V, V
= 4.5 V, I
= V
= 15 V, R
= 0 V, I
= 30 V, V
= 5 V, V
= 10 V, I
= 15 V, I
DS
GEN
15 V R
D
D
GS
GS
GS
GS
= 25 V, f = 1 MHz
= 15 A, T
= 15 A, T
, I
= 10 V, R
= 0 V, T
= 0 V, T
,
GS
D
= 10 V, I
D
10 V R
GS
GS
D
D
= 250 A
D
10 V I
GS
L
L
= 250 A
=
= 12.5 A
= 0.5
= 15 A
= 15 A
= 10 V
= 0 V
= 0 V
0 5
J
J
J
J
20 V
= 125 C
= 175 C
D
G
= 125 C
= 175 C
= 30 A
= 7.5
30 A
7 5
Min
1.0
30
30
10
Typ
0.020
0.033
0.036
0.030
1170
320
5.5
1.1
22
60
18
10
10
25
15
50
2
S-57253—Rev. D, 24-Feb-98
a
Document Number: 70268
Max
0.030
0.050
0.054
0.045
150
100
1.5
50
35
20
20
40
30
40
100
1
Unit
nA
nC
pF
ns
ns
ns
V
V
A
S
A
V
A
A
C
F