SUB60N06-18 Vishay Siliconix, SUB60N06-18 Datasheet
SUB60N06-18
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SUB60N06-18 Summary of contents
Page 1
... TO-263 Top View SUB60N06-18 Parameter 100 0 (TO-220AB and TO-263 (TO-263) A Parameter c PCB Mount (TO-263) Free Air (TO-220AB) SUP/SUB60N06-18 Vishay Siliconix N-Channel MOSFET Symbol Limit 120 ...
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... SUP/SUB60N06-18 Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance ...
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... Drain-to-Source Voltage (V) DS Document Number: 70290 S–57253—Rev. D, 24-Feb- 125 iss SUP/SUB60N06-18 Vishay Siliconix Transfer Characteristics 100 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs ...
Page 4
... SUP/SUB60N06-18 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0 –50 – – Junction Temperature ( C) J Maximum Avalanche and Drain Current vs. Case Temperature 70 60 www.DataSheet4U.com – Case Temperature ( Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.01 –5 10 www.vishay.com FaxBack 408-970-5600 ...