SI1401EDH Vishay Siliconix, SI1401EDH Datasheet

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SI1401EDH

Manufacturer Part Number
SI1401EDH
Description
P-Channel 12 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1401EDH-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet.co.kr
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
Ordering Information: Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
G
D
D
DS
- 12
(V)
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.034 at V
0.046 at V
0.070 at V
0.110 at V
R
DS(on)
6
5
4
GS
GS
GS
GS
()
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
J
D
D
S
= 150 °C)
b, d
P-Channel 12 V (D-S) MOSFET
I
D
- 4
- 4
- 4
- 4
(A)
Part # code
a
A
= 25 °C, unless otherwise noted
Q
14.1 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
Marking Code
(Typ.)
C
C
C
C
C
A
A
A
A
A
New Product
t  5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
B P X
X X X
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Typical ESD Performance 1500 V
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
Load Switch, PA Switch and Battery Switch for Portable
Devices
- Cellular Phone
- DSC
- Portable Game Console
- MP3
- GPS
V
V
I
P
, T
DM
I
I
thJA
thJF
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
60
34
- 55 to 150
- 4
- 4
- 1.3
1.6
1.0
Limit
± 10
- 2.3
- 12
- 25
260
- 4
- 4
2.8
1.8
a, b, c
a, b, c
b, c
b, c
a
a
b, c
Maximum
G
80
45
Vishay Siliconix
Si1401EDH
R
P-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
S
D
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI1401EDH Summary of contents

Page 1

... Top View Ordering Information: Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1401EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... On-Resistance vs. Drain Current Document Number: 70080 S10-1537-Rev. A, 19-Jul-10 New Product 2 1 1.0 1.5 2 Si1401EDH Vishay Siliconix - 150 ° ° - Gate-Source Voltage (V) GS Gate Current vs ...

Page 4

... Si1401EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 1.3 1 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.12 0.09 0.06 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.80 0.65 0.50 0.35 0. Junction Temperature (°C) J Threshold Voltage www.vishay.com ...

Page 5

... T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1401EDH Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Foot www ...

Page 6

... Si1401EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... - - Document Number: 71154 06-Jul-01 Package Information Vishay Siliconix Dim Min Nom Max A 0.90 – 1.10 A – – 0. 0.80 – 1. 0.15 – 0.30 c 0.10 – 0.25 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E 1.15 1.25 1. 0.65BSC e 1.20 1.30 1. 0.10 0.20 0.30 L 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 ...

Page 8

... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended ...

Page 9

... AN815 Vishay Siliconix Front of Board SC70-6 THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version ...

Page 10

... Time (Secs) FIGURE 4. Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 Alloy 42 Copper - 100 1000 FIGURE 5. Vishay Siliconix 250 200 150 Alloy 42 100 50 Copper Time (Secs) Leadframe Comparison on Alloy 42 1-inch ...

Page 11

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 12

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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