SI1402DH Vishay Siliconix, SI1402DH Datasheet

no-image

SI1402DH

Manufacturer Part Number
SI1402DH
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
www.DataSheet4U.com
Notes
a.
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
t A bi
0.120 @ V
J
J
a
a
0.077 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
Ordering Information: Si1402DH-T1—E3
D
D
G
GS
GS
a
a
= 2.5 V
(W)
= 4.5 V
N-Channel 30-V (D-S) MOSFET
1
2
3
SC-70 (6-LEADS)
a
SOT-363
Top View
A
6
5
4
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
A
A
A
A
New Product
I
= 25_C
= 70_C
= 25_C
= 70_C
D
D
D
S
3.4
2.5
(A)
Symbol
Symbol
T
FEATURES
D TrenchFETr Power MOSFET: 2.5-V Rated
APPLICATIONS
D Load Switch for Portable Applications
R
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
Marking Code
AE
Typical
5 secs
1.45
0.94
3.4
2.7
1.2
XX
65
87
40
Part # Code
−55 to 150
Lot Traceability
and Date Code
"12
30
8
Steady State
Maximum
Vishay Siliconix
0.95
130
2.7
2.2
0.8
0.6
85
50
Si1402DH
www.vishay.com
Completely
Product Is
Unit
Pb-free
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

Related parts for SI1402DH

SI1402DH Summary of contents

Page 1

... PRODUCT SUMMARY V ( DS(on) 0.077 @ 0.120 @ Ordering Information: Si1402DH-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) a ...

Page 2

... Si1402DH www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 73328 S-50527—Rev. A, 28-Mar-05 New Product Si1402DH Vishay Siliconix Transfer Characteristics 125_C C 2 25_C 1 −55_C 0 0.0 0.5 1.0 1.5 2.0 V − Gate-to-Source Voltage (V) GS ...

Page 4

... Si1402DH www.DataSheet4U.com Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0.00 0.3 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J www.vishay.com 4 New Product T = 25_C J 0.9 1.2 1.5 75 ...

Page 5

... Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −3 −2 10 Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si1402DH Vishay Siliconix Notes Duty Cycle ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product ...

Related keywords