SI1551DL Vishay Siliconix, SI1551DL Datasheet - Page 4

• Manufacturer Part Number: SI1551DL
• Description: Complementary 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.vishay.com
Si1551DL
Vishay Siliconix
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.1
-0.2
-0.3
0.2
0.1
0.1
0.01
1
0.1
-50
0.0
2
1
10
- 4
Source-Drain Diode Forward Voltage
-25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
0
Single Pulse
T
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
J
T
- Temperature (_C)
J
25
10
= 150_C
- 3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
10
100
T
- 2
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
- 1
1
6
5
4
3
2
1
0
5
4
3
2
1
0
10
0
- 3
On-Resistance vs. Gate-to-Source Voltage
10
- 2
1
V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
10
DM
JM
- Gate-to-Source Voltage (V)
Single Pulse Power
- 1
- T
Time (sec)
2
t
1
A
= P
t
2
DM
1
Z
S-21374—Rev. B, 12-Aug-02
thJA
100
thJA
t
t
Document Number: 71255
3
1
2
(t)
=400_C/W
10
N−CHANNEL
I
D
= 0.29 A
4
100
600
600
5