SI1902DL Vishay Siliconix, SI1902DL Datasheet - Page 3

• Manufacturer Part Number: SI1902DL
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71080
S-21374—Rev. E, 12-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
5
4
3
2
1
0
1
0.0
0.0
0.0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 0.66 A
0.2
On-Resistance vs. Drain Current
= 10 V
0.2
V
0.2
SD
T
Q
J
g
V
= 150_C
- Source-to-Drain Voltage (V)
I
0.4
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
= 2.5 V
Gate Charge
0.4
0.4
0.6
0.6
0.8
V
0.6
GS
T
0.8
J
= 4.5 V
= 25_C
1.0
1.0
0.8
1.2
100
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
-25
rss
D
GS
= 0.66 A
= 4.5 V
1
4
T
V
V
0
J
DS
GS
C
- Junction Temperature (_C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
C
50
iss
12
I
3
D
75
= 0.66 A
Si1902DL
100
16
www.vishay.com
4
125
150
20
5
3