SI1970DH Vishay Siliconix, SI1970DH Datasheet - Page 2

• Manufacturer Part Number: SI1970DH
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

SPICE Device Model Si1970DH
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
g
SD
oss
rss
iss
fs
gs
gd
g
V
V
V
DS
DS
DS
= 15 V, V
= 15 V, V
= 15 V, V
V
V
V
V
V
GS
Test Condition
DS
DS
GS
DS
= 2.5 V, I
= V
= 4.5 V, I
< 5 V, V
= 15 V, I
I
S
GS
GS
GS
GS
= 1.1 A
, I
= 4.5 V, I
= 10 V, I
= 0 V, f = 1 MHz
D
GS
D
D
= 250 µA
D
= 0.29 A
= 1.2 A
= 1.2 A
= 4.5 V
D
D
= 1.4 A
= 1.4 A
Simulated
Data
0.291
0.191
0.71
1.3
104
2.6
112
0.40
0.30
7.5
17
1.8
0.90
Measured
S-62325Rev. A, 27-Nov-06
Data
0.185
0.285
1.15
0.40
0.30
0.85
2.5
2.5
95
17
Document Number: 74354
9
Unit
nC
pF
Ω
V
A
S
V