SUM110N08-07L Vishay Siliconix, SUM110N08-07L Datasheet - Page 2

• Manufacturer Part Number: SUM110N08-07L
• Description: N-Channel 75-V (D-S) 175C MOSFET
• Manufacturer: Vishay Siliconix

SPICE Device Model SUM110N08-07L
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
C
C
V
C
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
t
t
t
oss
SD
iss
rss
rr
gd
r
gs
f
g
I
D
V
V
V
V
DS
≅ 110 A, V
GS
GS
GS
I
= 30 V, V
F
= 10 V, I
= 10 V, I
= 0 V, V
V
= 110 A, di/dt = 100 A/µs
V
Test Conditions
V
V
V
I
DD
DS
F
DS
GS
GS
= 110 A, V
= 30 V, R
= V
= 4.5 V, I
≥ 5 V, V
= 10 V, I
GEN
DS
D
D
GS
GS
= 30 A, T
= 30 A, T
, I
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, R
D
GS
L
= 250 µA
D
GS
D
= 0.47 Ω
= 30 A
= 20 A
= 10 V
= 0 V
J
J
D
= 125°C
= 175°C
G
= 110 A
= 2.5 Ω
Simulated
0.0056
0.0089
0.0076
Data
0.011
4700
0.93
865
678
330
2.1
82
20
20
19
12
18
16
31
Measured
0.0055
0.0075
Data
4420
700
310
81
20
20
15
20
40
15
55
1
Document Number: 70308
Unit
09-Jun-04
nC
pF
ns
Ω
V
A
V