SUM60P05-11LT Vishay Siliconix, SUM60P05-11LT Datasheet
SUM60P05-11LT
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SUM60P05-11LT Summary of contents
Page 1
... Parameter T = 25_C 100_C 0 25_C 25_C A Parameter d PCB Mount SUM60P05-11LT Vishay Siliconix D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package D Automotive D Industrial Symbol Limit V –55 DS " ...
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... SUM60P05-11LT Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance Sense Diode Forward Voltage Sense Diode Forward Voltage Increase a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... S-05060—Rev. A, 12-Nov- –55_C C 25_C 125_C 60 80 100 120 C iss C oss SUM60P05-11LT Vishay Siliconix Transfer Characteristics 250 T = –55_C C 200 25_C 150 125_C 100 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUM60P05-11LT Vishay Siliconix On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 –50 – – Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 25_C 0.1 0.00001 0.0001 0.001 Sense Diode Forward Voltage vs. Temperature 1.0 0.8 = 125 0.6 0.4 0.2 0 – Junction Temperature (_C) J www ...
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... Single Pulse 0.01 –4 10 Document Number: 71748 S-05060—Rev. A, 12-Nov-01 100 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case 0.05 –3 – Square Wave Pulse Duration (sec) SUM60P05-11LT Vishay Siliconix Safe Operating Area 1000 Limited by r DS(on) 100 25_C 1 C Single Pulse 0.1 0.1 1 ...