SUM70N06-11 Vishay Siliconix, SUM70N06-11 Datasheet
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SUM70N06-11
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SUM70N06-11 Summary of contents
Page 1
... D S N-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED 25_C 100_C 0 25_C 25_C A SUM70N06-11 Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D S Symbol Limit " ...
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... SUM70N06-11 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge ...
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... V 120 0.015 55_C C 0.012 25_C 0.009 125_C 0.006 0.003 0.000 iss SUM70N06-11 Vishay Siliconix Transfer Characteristics 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUM70N06-11 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 25_C ( 150_C AV J 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product ...
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... Document Number: 72008 S-03592—Rev. B, 31-Mar-03 New Product 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM70N06-11 Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 Drain-to-Source Voltage ( ...