SI3495DV Vishay Siliconix, SI3495DV Datasheet
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SI3495DV
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SI3495DV Summary of contents
Page 1
... DataSheet4U.com Document Number: 73150 S-50836Rev. B, 16-May-05 SPICE Device Model Si3495DV P-Channel 20-V (D-S) MOSFET • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...
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... SPICE Device Model Si3495DV Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage ba On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. ...
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... COMPARISON OF MODEL WITH MEASURED DATA (T DataSheet4U.com Document Number: 73150 S-50836Rev. B, 16-May-05 SPICE Device Model Si3495DV =25°C UNLESS OTHERWISE NOTED) J DataSheet4U.com Vishay Siliconix www.vishay.com 3 ...