SI3900DV Vishay Siliconix, SI3900DV Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
SI3900DV
Manufacturer Part Number
SI3900DV
Description
Dual N-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SI3900DV.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3900DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3900DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3900DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.2
–0.4
–0.6
0.4
0.2
0.01
0.01
0.1
0.1
–50
2
1
2
1
10
10
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
0
Single Pulse
T
Threshold Voltage
I
D
J
10
– Temperature (_C)
= 250 mA
25
–3
Single Pulse
10
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
–2
_
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
150
–2
10
–1
10
1
–1
8
6
4
2
0
0.01
Single Pulse Power, Junction-to-Ambient
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
0.1
– T
A
t
1
1
= P
Time (sec)
t
2
DM
Z
thJA
thJA
100
t
t
(t)
1
2
S-03511—Rev. B, 16-Apr-01
= 130_C/W
1
Document Number: 71178
600
10
10
30